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Entanglement entropy of generalized Moore-Read fractional quantum Hall state interfaces
Physical Review B ( IF 3.2 ) Pub Date : 2020-07-01 , DOI: 10.1103/physrevb.102.045102
Ramanjit Sohal , Bo Han , Luiz H. Santos , Jeffrey C. Y. Teo

Topologically ordered phases of matter can be characterized by the presence of a universal, constant contribution to the entanglement entropy known as the topological entanglement entropy (TEE). The TEE can be calculated for Abelian phases via a “cut-and-glue” approach by treating the entanglement cut as a physical cut, coupling the resulting gapless edges with explicit tunneling terms, and computing the entanglement between the two edges. We provide a first step towards extending this methodology to non-Abelian topological phases, focusing on the generalized Moore-Read (MR) fractional quantum Hall states at filling fractions ν=1/n. We consider interfaces between different MR states, write down explicit gapping interactions, which we motivate using an anyon condensation picture, and compute the entanglement entropy for an entanglement cut lying along the interface. Our work provides new insight towards understanding the connections between anyon condensation, gapped interfaces of non-Abelian phases, and TEE.

中文翻译:

广义Moore-Read分数量子霍尔态接口的纠缠熵

物质的拓扑有序相的特征可以是存在普遍的,恒定的对纠缠熵的贡献,称为拓扑纠缠熵(TEE)。通过将“缠结”切口视为物理切口,将得到的无间隙边缘与显式隧穿项耦合,并计算两个边缘之间的缠结,可以通过“切口和胶水”方法来计算Abelian相的TEE。我们提供了将这种方法扩展到非阿贝尔拓扑阶段的第一步,重点是填充分数下的广义摩尔-读(MR)分数量子霍尔态。ν=1个/ñ。我们考虑了不同MR状态之间的接口,记下了使用Anyon凝聚图片激发的显式间隙相互作用,并计算了沿接口处的纠缠切口的纠缠熵。我们的工作为理解Anyon凝聚,非阿贝尔相的间隙界面和TEE之间的联系提供了新的见解。
更新日期:2020-07-01
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