Abstract

The processes of crystallization of amorphous germanium films of various thicknesses and multilayer germanium/silicon nanostructures under isothermal annealing (T = 440°C) were studied. Samples were grown on glass substrates using the method of plasma-chemical deposition. The phase composition of the structures was determined from the analysis of Raman spectra. It was found that 200 nm thick germanium film almost completely crystallizes after two hours of annealing, while crystalline nuclei with a volume fraction of less than 1% only appear in a 6 mm thick germanium film. Four-hour annealing of a thin film leads to a noticeable increase in the nuclei size and the crystallinity fraction increases to 40%. Annealing of a-Ge (6 nm) nanolayers embedded in a-Si matrix under the same conditions for 2 and 4 hours does not even lead to partial crystallization, the layers remain amorphous. The influence of interfaces on the crystallization of germanium layers is discussed.

中文翻译：

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界面和厚度对非晶锗薄膜结晶动力学的影响

摘要

研究了等温退火（T = 440°C）下不同厚度的非晶锗膜和多层锗/硅纳米结构的晶化过程。使用等离子化学沉积方法在玻璃基板上生长样品。通过拉曼光谱分析确定结构的相组成。发现在退火两小时后，200 nm厚的锗膜几乎完全结晶，而体积分数小于1％的晶核仅出现在6 mm厚的锗膜中。薄膜的四小时退火导致晶核尺寸显着增加，并且结晶度分数增加到40％。退火的一个-Ge（6纳米）的纳米层嵌入在一个-Si基体在相同条件下放置2和4个小时甚至不会导致部分结晶，这些层仍保持非晶态。讨论了界面对锗层结晶的影响。