Abstract

A new Pd|HfO₂|AlGaN|GaN metal-oxide-semiconductor (MOS) enhancement-mode high electron mobility transistor (HEMT) is fabricated with low-temperature sensitization, activation, electroless-plating, and two-step gate-recess approaches. Experimentally, a high positive threshold voltage V_th of 1.96 V, a very low gate leakage I_G of 6.3 × 10^–8 mA/mm, a high maximum extrinsic transconductance g_{m, max} of 75.3 mS/mm, a high maximum drain saturation current I_{D, max} of 266.9 mA/mm, and a high ON/OFF current ratio of 7.6 × 10⁷ are obtained at 300 K. Moreover, the related temperature-dependent characteristics, over temperature ranges from 300 to 500 K, are comprehensively studied. The very low temperature coefficients on gate current, drain saturation current, transconductance, and threshold voltage confirm the thermal-stable capability of the studied device. Therefore, based on these advantages, the studied Pd|HfO₂|AlGaN|GaN MOS structure is suitable for the development of high-performance HEMTs.

中文翻译：

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敏化，活化和化学镀方法研究Pd | HfO 2 | AlGaN | GaN增强型高电子迁移率晶体管

摘要

利用低温敏化，激活，化学镀和两步栅凹槽法制造了新型Pd | HfO ₂ | AlGaN | GaN金属氧化物半导体（MOS）增强型高电子迁移率晶体管（HEMT）。 。实验上，正阈值电压V _th为1.96 V，栅极泄漏I _G非常低，为6.3×10 ^–8 mA / mm，最大非本征跨导g _{m为最大，最大值}为75.3 mS / mm，最大漏极饱和度为最大电流I _D，最大266.9 mA / mm，高开/关电流比7.6×10 ⁷可以在300 K的温度下获得。此外，还对300至500 K范围内的温度相关特性进行了全面研究。栅极电流，漏极饱和电流，跨导和阈值电压上的极低温度系数确定了所研究器件的热稳定性。因此，基于这些优点，所研究的Pd | HfO ₂ | AlGaN | GaN MOS结构适合于高性能HEMT的开发。