XRD, ESR, TRMC and UV–visible spectroscopy are used for the description of characteristics of investigated systems and determination of forming structure mechanism in Al, Zr or Ce doped non-stoichiometric ZnO_1−x. It was shown the Al and Zr ions substitute the lattice Zn²⁺ in the ZnO matrix, and as a result, the donor's levels form in ZnO bandgap and acceptor’s level of zinc vacancy. Last level is a trap of phogenerate holes in material and it allows to delay photocatalytic actvity Al- and Zr-doped ZnO. Ce ions incorporate as interstiallite ions or segregate on crystal surface that leads to appearance the f-levels in the bandgap of ZnO, and as a result, the cerium ion will trap for electron. It decreases electron lifetime or increases of hole lifetime and also if cerium ion segregates on the ZnO surface the set of reactions (Ce⁴⁺ + e- = Ce³⁺, Ce³⁺ + O₂ = Ce⁴⁺ + O₂⁻) may occur. It leads to form additional reactive oxygen species, in particular, super-anion radicals (O₂⁻, ROS) that improve the activity of the material. As a result, the increasing of phenol degradation by 30% compared to pure ZnO may be achieved at the choice of Ce-doped ZnO catalyst.

XRD，ESR，TRMC和紫外可见光谱用于描述所研究系统的特征，并确定Al，Zr或Ce掺杂的非化学计量ZnO _1-x的形成结构机理。结果表明，Al和Zr离子替代了Zn ²⁺晶格因此，在ZnO带隙中形成了供体能级，在锌的空位中形成了供体能级。最后一级是材料中的光气空穴陷阱，它可以延迟光催化活性Al和Zr掺杂的ZnO。Ce离子作为填缝剂离子结合或偏析在晶体表面上，从而导致ZnO带隙中出现f-能级，结果，铈离子将捕获电子。它减少电子寿命或空穴寿命的增加，并且还如果在ZnO铈离子偏析表面组反应（铈⁴⁺  + E- =铈³⁺，铈³⁺  + O ₂  =铈⁴⁺  + O ₂ ^-） 可能导致。它导致形成另外的活性氧物种，特别是，超阴离子自由基（O ₂ ^-，ROS），其提高了材料的活性。结果，在选择Ce掺杂的ZnO催化剂时，可以实现与纯ZnO相比苯酚降解增加30％。