The surface states (N_ss), relaxation time (τ), and series resistance (R_s) values as a function of frequency for various bias voltage of the metal-insulator-semiconductor (MIS) structure were obtained by using the impedance measurements which is including capacitance (C) and conductance (G/ω) in the frequency range of 0.5–500 kHz at room temperature. C/G-V plots for each frequency have inversion-depletion-accumulation regions and show a strong frequency and voltage-dependent at low-moderate frequencies due to the existence of N_ss, R_s and Zinc Oxide (ZnO) interlayer. The parallel conductance (G_p/ω) between −2 and 1.5 V shows a distinctive peak for almost every voltage and its position shifts to higher frequencies with increasing voltage. The values barrier height (Ф_B), concentration of donor atoms (N_D), and depletion layer thickness (W_D) were calculated from the slope and intercept C⁻²-V plots as function of frequency. On the other hand, ideality factor (n), barrier-height (Φ_Bo) and R_s of the structure were calculated from both the thermionic-emission (TE) and Cheung functions which are usually good consisted with each other, some little discrepancies in them were attributed to the voltage-dependent of them and the nature of the used technique.

对于金属-绝缘体-半导体（MIS）结构的各种偏置电压，表面状态（N _ss），弛豫时间（τ）和串联电阻（R _s）值随频率变化的频率是通过使用阻抗测量获得的，包括在室温下0.5–500 kHz频率范围内的电容（C）和电导（G /ω）。由于N _ss，R _s和氧化锌（ZnO）中间层的存在，每个频率的C / GV图具有反转损耗累积区域，并且在低中频下显示出很强的频率和电压依赖性。平行电导（G _p在-2和1.5 V之间的/ω）几乎对每个电压都显示一个独特的峰值，并且随着电压的增加，其位置会移至更高的频率。值势垒高度（Ф_乙），供体原子（N的浓度_d），并且耗尽层厚度（W _d）从斜率和截距进行计算：C ^-2 -V曲线作为频率的函数。在另一方面，理想因子（n）时，势垒高度（Φ_柏）和R_小号从两个热离子发射（TE）及长功能，这通常是良好的由具有相互分别计算结构的，一些小的差异其中的原因归因于它们的电压依赖性以及所用技术的性质。