Abstract—

A LiNbO₃:Zn (4.69 mol % ZnO) crystal grown from a charge synthesized using homogeneously doped Nb₂O₅ as a precursor has been shown to contain less luminescence centers in comparison with a LiNbO₃:Zn (4.60 mol % ZnO) crystal prepared via direct doping. In the case of LiNbO₃:Zn crystals prepared via direct doping, the intensity of all luminescence bands varies monotonically as the ZnO concentration is raised to 4.60 mol %. At a ZnO concentration of ~4.60 mol %, the intensity of all the bands changes sharply, suggesting that the system of luminescence centers in the material undergoes structural changes.

中文翻译：

---

不同来源的LiNbO 3：Zn（0.03–5.50 mol％ZnO）晶体的发光

摘要-

与使用LiNbO ₃：Zn（4.60 mol％ZnO）晶体相比，由使用均匀掺杂的Nb ₂ O ₅作为前体合成的电荷生长的LiNbO ₃：Zn（4.69 mol％ZnO）晶体显示出具有更少的发光中心。通过直接掺杂制备。在通过直接掺杂制备的LiNbO ₃：Zn晶体的情况下，随着ZnO浓度升高到4.60mol％，所有发光带的强度单调变化。在ZnO浓度约为4.60 mol％时，所有谱带的强度都会急剧变化，这表明材料中的发光中心系统发生了结构变化。