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High-resolution, full-color quantum dot light-emitting diode display fabricated via photolithography approach
Nano Research ( IF 9.5 ) Pub Date : 2020-06-25 , DOI: 10.1007/s12274-020-2883-9
Wenhai Mei , Zhenqi Zhang , Aidi Zhang , Dong Li , Xiaoyuan Zhang , Haowei Wang , Zhuo Chen , Yanzhao Li , Xinguo Li , Xiaoguang Xu

Displays play an extremely important role in modern information society, which creates a never-ending demand for the new and better products and technologies. The latest requirements for novel display technologies focus on high resolution and high color gamut. Among emerging technologies that include organic light-emitting diode (OLED), micro light-emitting diode (micro-LED), quantum dot light-emitting diode (QLED), laser display, holographic display and others, QLED is promising owing to its intrinsic high color gamut and the possibility to achieve high resolution with photolithography approach. However, previously demonstrated photolithography techniques suffer from reduced device performance and color impurities in subpixels from the process. In this study, we demonstrated a sacrificial layer assisted patterning (SLAP) approach, which can be applied in conjunction with photolithography to fabricate high-resolution, full-color quantum dot (QD) patterns. In this approach, the negative photoresist (PR) and sacrificial layer (SL) were utilized to determine the pixels for QD deposition, while at the same time the SL helps protect the QD layer and keep it intact (named PR-SL approach). To prove this method’s viability for QLED display manufacture, a 500-ppi, full-color passive matrix (PM)-QLED prototype was fabricated via this process. Results show that there were no color impurities in the subpixels, and the PM-QLED has a high color gamut of 114% National Television Standards Committee (NTSC). To the best of our knowledge, this is the first full-color QLED prototype with such a high resolution. We anticipate that this innovative patterning technique will open a new horizon for future display technologies and may lead to a disruptive and innovative change in display industry.



中文翻译:

通过光刻方法制造的高分辨率,全色量子点发光二极管显示器

显示器在现代信息社会中扮演着极其重要的角色,这对新的更好的产品和技术提出了永无止境的需求。新型显示技术的最新要求集中在高分辨率和高色域上。在包括有机发光二极管(OLED),微发光二极管(micro-LED),量子点发光二极管(QLED),激光显示器,全息显示器等在内的新兴技术中,由于其固有的特性,QLED很有希望高色域以及使用光刻方法实现高分辨率的可能性。然而,先前证明的光刻技术遭受该工艺的降低的器件性能和子像素中的颜色杂质的困扰。在这项研究中,我们展示了一种牺牲层辅助图案(SLAP)方法,可以与光刻技术结合使用,以制造高分辨率的全色量子点(QD)模式。在这种方法中,负性光刻胶(PR)和牺牲层(SL)用于确定QD沉积的像素,同时SL帮助保护QD层并使其保持完整(称为PR-SL方法)。为了证明该方法在QLED显示器制造中的可行性,通过该工艺制造了500ppi的全色无源矩阵(PM)-QLED原型。结果表明,子像素中没有颜色杂质,并且PM-QLED具有114%的国家电视标准委员会(NTSC)的高色域。据我们所知,这是第一个具有如此高分辨率的全色QLED原型。

更新日期:2020-06-25
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