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Room temperature ammonia gas sensor using Nd-doped SnO 2 thin films and its characterization
Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2020-06-22 , DOI: 10.1007/s10854-020-03809-6
S. Maheswari , M. Karunakaran , L. Bruno Chandrasekar , K. Kasirajan , N. Rajkumar

Nd-doped SnO2 thin films are prepared by the nebulizer spray pyrolysis method. The compositional and morphological studies are discussed. The X-ray diffraction reveals that the films are polycrystalline in nature. The grain size increases as the doping concentration of Nd increases. The x-axis orientation of the films is enhanced by Nd doping. The intensity of the miller indices (200) is enhanced due to doping. In the Raman spectrum, the doping concentration-dependent intensity is observed. The quenching is observed in the photoluminescence spectrum. The transmittance and the band gap of films have been decreased due to doping. The 5 wt% Nd-doped film shows the maximum response to ammonia.



中文翻译:

Nd掺杂SnO 2薄膜的室温氨气传感器及其表征

通过喷雾器喷雾热解法制备了掺钕SnO 2薄膜。讨论了组成和形态学研究。X射线衍射表明该膜本质上是多晶的。随着Nd的掺杂浓度增加,晶粒尺寸增加。Nd掺杂增强了薄膜的x轴取向。由于掺杂,米勒指数(200)的强度增强。在拉曼光谱中,观察到掺杂浓度依赖性强度。在光致发光光谱中观察到猝灭。由于掺杂,膜的透射率和带隙减小。掺Nd的5 wt%薄膜显示出对氨的最大响应。

更新日期:2020-06-23
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