Ni_1−xZn_xO (with 0 ≤ x ≤ 0.05) nanoparticles are synthesized by chemical precipitation method in order to investigate the effect of Zn doping on the dielectric and transport properties of NiO. Prepared samples are characterized by means of X-ray diffraction (XRD) method, scanning electron microscope (SEM), and Transmission electron microscope (TEM). The size of the nanoparticles is calculated and found to be 26 nm and 22 nm for x = 0.0 and 0.05, respectively. Regular increase of the optical band gap with increase in doping concentration (x) is observed which is consistent with the variation of particle size. Frequency (f) dependence of AC (σ_ac) conductivity, dielectric constant (ε_r), and dielectric loss (tanδ) of Ni_1−xZn_xO (0 ≤ x ≤ 0.05) has been studied. It is observed that the dielectric constant (ε_r) increases gradually with x at high frequency (2 MHz). The dc conductivity (σ_dc) is found to decrease with Zn doping at room temperature which may be attributed to the reduction of oxygen vacancy. The temperature dependence of dielectric properties for x = 0.00, 0.05 are also investigated as a function of f. Cross over of dc conductivity of Ni_0.95Zn_0.05O to that of NiO observed around ~ 365 K indicates the lowering of activation energy of conductivity for x = 0.05 with increase in temperature.

倪_{1- X}的Zn _X O（其中0≤  X  ≤0.05）纳米颗粒通过化学沉淀法为了研究锌掺杂对NiO的介电性质和输运性质的影响合成。制备的样品通过X射线衍射（XRD）方法，扫描电子显微镜（SEM）和透射电子显微镜（TEM）进行表征。计算纳米颗粒的尺寸，发现对于x  ＝ 0.0和0.05，纳米颗粒的尺寸分别为26nm和22nm 。随着掺杂浓度（x）的增加，光学带隙的规则增加被观察到，这与粒径的变化一致。频率（˚F）AC的依赖性（σ_交流）传导性，介电常数（ε _{- [R} ）和介电损耗（tanδ δ的Ni）_{1- X}的Zn _X O（0≤  X  ≤0.05）进行了研究。据观察，在介电常数（ε _{- [R} ）与逐渐增加X在高频率（2兆赫）。直流电导率（σ_直流）被发现，在室温下用锌掺杂，其可以归因于氧空位的减少降低。x  = 0.00，0.05时介电性能的温度依赖性也作为f的函数进行了研究。Ni _0.95的直流电导率的穿越在365 K附近观察到的Zn相对于NiO的Zn为_0.05 O，这表明x  = 0.05时电导率的活化能随温度升高而降低。