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Doping-induced dielectric and transport properties of Ni1−xZnxO

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Abstract

Ni1−xZnxO (with 0 ≤ x ≤ 0.05) nanoparticles are synthesized by chemical precipitation method in order to investigate the effect of Zn doping on the dielectric and transport properties of NiO. Prepared samples are characterized by means of X-ray diffraction (XRD) method, scanning electron microscope (SEM), and Transmission electron microscope (TEM). The size of the nanoparticles is calculated and found to be 26 nm and 22 nm for x = 0.0 and 0.05, respectively. Regular increase of the optical band gap with increase in doping concentration (x) is observed which is consistent with the variation of particle size. Frequency (f) dependence of AC (σac) conductivity, dielectric constant (εr), and dielectric loss (tanδ) of Ni1−xZnxO (0 ≤ x ≤ 0.05) has been studied. It is observed that the dielectric constant (εr) increases gradually with x at high frequency (2 MHz). The dc conductivity (σdc) is found to decrease with Zn doping at room temperature which may be attributed to the reduction of oxygen vacancy. The temperature dependence of dielectric properties for x = 0.00, 0.05 are also investigated as a function of f. Cross over of dc conductivity of Ni0.95Zn0.05O to that of NiO observed around ~ 365 K indicates the lowering of activation energy of conductivity for x = 0.05 with increase in temperature.

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Acknowledgements

The authors thank DST, Government of India, for developing instrumental facilities like X-ray powder diffractometer (Bruker D8) and FESEM (JEOL, JSM-7610F) and LCR Meter (Agilent 4294A Precision Impedance Analyzer) under FIST programme at Jadavpur University. Authors would like to thank DHESTBT, Government of West Bengal (Project No. 426(Sanc.)/ST/P/S&T/16G-16/2018) and JU-RUSA 2.0 Major Research Support (Project No. R-11/468/19) for providing financial support.

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  1. Department of Physics, Jadavpur University, Kolkata, 700 032, India

    Neepamala Giri, Archita Mondal, Sanchari Sarkar & Ruma Ray

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Giri, N., Mondal, A., Sarkar, S. et al. Doping-induced dielectric and transport properties of Ni1−xZnxO. J Mater Sci: Mater Electron 31, 12628–12637 (2020). https://doi.org/10.1007/s10854-020-03813-w

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