Deep reactive ion etching (DRIE) technology is one of the most important technologies in the processing of microelectronic devices and microelectromechanical system. As a necessary process in semiconductor integration, it has been widely studied in the past decades. It is known that the traditional DRIE process typically uses a plasma etching reactor equipped with inductively coupled plasma (ICP) sources to generate a high-density plasma so as to achieve high aspect ratio trenches with relatively small roughness. A cryogenic temperature control unit is typically employed as well. Here, however, we use a parallel plate RIE with rather simple structure, which is not usually used for DRIE, to obtain high aspect ratio silicon etching. With no ICP sources and no sophisticated temperature control unit, the system and experiment are now much more cost effective. Through the optimization of the processing, the etching rate of silicon can reach 440 nm/min. Finally, a 45 μm deep trench is etched in silicon with good perpendicularity. This method will greatly reduce the equipment related cost, especially for those applications that do not have extremely stringent requirement on the final etching accuracy.

中文翻译：

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使用非 ICP 设备对硅进行深度反应离子蚀刻

深反应离子刻蚀（DRIE）技术是微电子器件和微机电系统加工中最重要的技术之一。作为半导体集成的必要工艺，在过去的几十年中得到了广泛的研究。众所周知，传统的DRIE工艺通常使用配备有电感耦合等离子体(ICP)源的等离子体蚀刻反应器来产生高密度等离子体，从而获得粗糙度相对较小的高深宽比沟槽。通常也使用低温温度控制单元。然而，在这里，我们使用结构相当简单的平行板 RIE，通常不用于 DRIE，以获得高纵横比的硅蚀刻。没有ICP源和复杂的温度控制单元，该系统和实验现在更具成本效益。通过工艺的优化，硅的蚀刻速率可以达到440 nm/min。最后，在具有良好垂直度的硅中蚀刻 45 μm 深的沟槽。这种方法将大大降低设备相关成本，特别是对于那些对最终蚀刻精度要求不是非常严格的应用。