Abstract This paper presents a new single event transient hardened complementary delay cell (SET-H CDC) for radiation environment. The performance of the proposed topology has been compared with the existing radiation-hardened delay cell topologies called wide tuning delay cell and complementary delay cell (CDC). A three-stage VCO has been designed with each of the delay cell topologies for low power consumption while maintaining maximum swing. The VCO is designed using 90 nm CMOS process technology work with 1 Volt DC supply operating at 2.6 GHz frequency. The proposed topology shows better single event tolerance and reduced Impulse Sensitivity Function (ISF) while maintaining a rail-rail swing over a wide frequency tuning range. The proposed topology achieves a 17% improvement in rms ISF compared to wide tuning delay cell and 1.2% improvement compared to CDC delay cell.

中文翻译：

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用于差分环 VCO 的单事件瞬态硬化延迟单元

摘要 本文提出了一种用于辐射环境的新型单事件瞬态硬化互补延迟单元（SET-H CDC）。所提出的拓扑结构的性能已与现有的抗辐射延迟单元拓扑结构进行了比较，称为宽调谐延迟单元和互补延迟单元 (CDC)。每个延迟单元拓扑都设计了一个三级 VCO，以实现低功耗，同时保持最大摆幅。VCO 使用 90 nm CMOS 工艺技术设计，工作在 2.6 GHz 频率下的 1 伏直流电源。所提出的拓扑显示出更好的单事件容限和降低的脉冲灵敏度函数 (ISF)，同时在宽频率调谐范围内保持轨-轨摆幅。与宽调谐延迟单元和 1 相比，所提出的拓扑在均方根 ISF 方面实现了 17% 的改进。