Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of the nucleation and growth of three-dimensional islands by the Volmer–Weber mechanism in this system is proposed. The dependences of the average size and surface density of quantum dots on the parameters of their synthesis are obtained. The proposed theoretical model can easily be extended to other material systems in which island growth by the Volmer–Weber mechanism is realized.

中文翻译：

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氧化硅表面锗量子点的生长

考虑了氧化硅表面上锗量子点的外延生长。提出了在该系统中通过 Volmer-Weber 机制进行三维岛形核和生长的动力学模型。获得了量子点的平均尺寸和表面密度对其合成参数的依赖性。所提出的理论模型可以很容易地扩展到其他材料系统，其中通过 Volmer-Weber 机制实现了岛状生长。