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Synthesis and characterization of semiconducting sinnerite (Cu6As4S9) thin films
MRS Communications ( IF 1.8 ) Pub Date : 2020-03-01 , DOI: 10.1557/mrc.2020.11
Scott A. McClary , Rakesh Agrawal

Sinnerite (Cu6As4S9) is a semiconductor computed to have attractive optoelectronic properties, but little attention has been paid to its experimental synthesis and characterization. Here, the authors report the first synthesis of polycrystalline sinnerite thin films. By heating Cu3AsS4 nanoparticles in sealed ampoules with As2S2 powder, a phase transformation to Cu6As4S9 is achieved along with the formation of micronsized dense grains appropriate for device applications. The films display a bandgap of ~1.2 eV, significant photocurrent generation under simulated AM1.5 illumination, and carrier lifetimes nearing 1 ns, demonstrating the promise of sinnerite for use in photovoltaic applications.

中文翻译:

半导体烧结 (Cu6As4S9) 薄膜的合成与表征

Sinnerite (Cu6As4S9) 是一种经计算具有有吸引力的光电特性的半导体,但对其实验合成和表征的关注很少。在这里,作者报告了多晶烧结矿薄膜的首次合成。通过用 As2S2 粉末加热密封安瓿中的 Cu3AsS4 纳米颗粒,可实现向 Cu6As4S9 的相变,同时形成适用于设备应用的微米级致密晶粒。这些薄膜显示出约 1.2 eV 的带隙,在模拟 AM1.5 照明下产生显着的光电流,以及接近 1 ns 的载流子寿命,证明了奥氏体在光伏应用中的应用前景。
更新日期:2020-03-01
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