Here, we report a detailed method of growing LaAlGe, a non-magnetic Weyl semimetal, thin film on silicon(100) substrates by molecular beam epitaxy and their structural and electrical characterizations. 50 nm thick LaAlGe films were deposited and annealed for 16 hours in situ at a temperature 793 K. As-grown high-quality films showed uniform surface topography and near ideal stoichiometry with a body-centered tetragonal crystal structure. Temperature-dependent longitudinal resistivity can be understood with dominant interband s-d electron-phonon scattering in the temperature range 5-40 K. Hall measurements confirmed the semimetallic nature of the films with electron dominated charge carrier density near 7.15*10^21 cm^-3 at 5 K.

中文翻译：

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非磁性Weyl半金属LaAlGe薄膜的分子束外延生长

在这里，我们报告了一种通过分子束外延在硅 (100) 衬底上生长 LaAlGe（一种非磁性外尔半金属薄膜）的详细方法及其结构和电气特性。沉积 50 nm 厚的 LaAlGe 薄膜，并在 793 K 的温度下原位退火 16 小时。生长的高质量薄膜显示出均匀的表面形貌和接近理想的化学计量，具有体心四方晶体结构。温度相关的纵向电阻率可以理解为在 5-40 K 温度范围内占主导地位的带间 sd 电子-声子散射。霍尔测量证实了薄膜的半金属性质，电子主导的电荷载流子密度接近 7.15*10^21 cm^-3在 5 K。