Indium tin oxide (ITO) has been studied for applications at normal high temperatures, below 600°C, due to its excellent electrical characteristics. In an attempt to further match the needs of electronics for use in extremely harsh environments, the changes in the conductive properties of ITO films and their mechanism were investigated at special high-temperatures above 1,000°C. ITO films were prepared by pulsed laser deposition (PLD) onto lanthanum gallium silicate (LGS) substrates. Furthermore, the as-deposited samples were annealed with different temperature-time treatments, and we investigated the effects of annealing on the electrical, structure, surface morphology and chemical properties of the ITO films by X-ray diffraction analysis, scanning electron microscopy (SEM), resistance measurements, and X-ray photoelectron spectroscopy (XPS). The experimental results showed that the decreased resistance of the ITO films was mainly attributed to the increase in the crystalline size and the increased amount of Sn⁴⁺ ions during the heating period (0–1,000°C). Generally, the ITO films showed stable electrical properties when they were heated at 1,000°C for at least 2.5 h. As expected, the ITO films that remained steady above 1,000°C have potential applications as electrodes working in special high-temperature environments.

铟锡氧化物（ITO）具有出色的电气特性，因此已在低于600°C的正常高温下进行了研究。为了进一步满足在极端恶劣环境中使用电子设备的需求，在1,000°C以上的特殊高温下研究了ITO膜的导电性能及其机理的变化。通过脉冲激光沉积（PLD）在硅酸镧镓（LGS）基板上制备ITO膜。此外，对沉积后的样品进行不同的温度-时间处理，并通过X射线衍射分析，扫描电子显微镜（SEM）研究了退火对ITO膜的电学，结构，表面形态和化学性质的影响。 ），电阻测量和X射线光电子能谱（XPS）。在加热期间（0–1,000°C）中有^4+个离子。通常，将ITO薄膜在1,000°C加热至少2.5小时后，其电性能便稳定。不出所料，在1,000°C以上保持稳定的ITO膜有可能在特殊的高温环境中用作电极。