Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high reflectivity in the NIR range of the spectrum: the table width is about 100 nm for semiconductor reflectors and more than 200 nm for dielectric reflectors. It is shown that a maximum depth of absorption modulation from 1 to 40% is possible. The recovery time of the saturable absorber (2 ps) makes these mirrors significantly fit for using in lasers with a pulse repetition rate of 1 GHz.

中文翻译：

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用于 NIR 激光器无源锁模的具有小弛豫时间的宽带半导体反射镜

两种类型的具有饱和吸收的反射镜结构正在考虑中：由半导体材料生长的单片反射镜和带有电介质反射器的反射镜，包含转移到电介质的半导体结构的量子阱。两种类型的反射镜在光谱的 NIR 范围内都表现出高反射率：半导体反射器的工作台宽度约为 100 nm，介质反射器的工作台宽度超过 200 nm。结果表明，从 1% 到 40% 的最大吸收调制深度是可能的。可饱和吸收体的恢复时间 (2 ps) 使这些反射镜非常适合用于脉冲重复率为 1 GHz 的激光器。