Abstract
Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high reflectivity in the NIR range of the spectrum: the table width is about 100 nm for semiconductor reflectors and more than 200 nm for dielectric reflectors. It is shown that a maximum depth of absorption modulation from 1 to 40% is possible. The recovery time of the saturable absorber (2 ps) makes these mirrors significantly fit for using in lasers with a pulse repetition rate of 1 GHz.
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The authors are grateful to the staff of the ILP SB RAS V. S. Pivtsov, S. A. Kuznetsov, and A. V. Semenko for testing results for mirrors with saturable absorption in a Yb3+:KY(WO4)2 laser.
This paper was financially supported by the Russian Foundation for Basic Research (Grants No. 18-29-20007 and 18-42-543001).
Russian Text © The Author(s), 2019, published in Avtometriya, 2019, Vol. 55, No. 5, pp. 20–23.
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Rubtsova, N.N., Borisov, G.M., Gol’dort, V.G. et al. Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers. Optoelectron.Instrument.Proc. 55, 437–440 (2019). https://doi.org/10.3103/S8756699019050030
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DOI: https://doi.org/10.3103/S8756699019050030