Ultrathin films of InSe are obtained via the thermal evaporation of indium selenide in a vacuum. The results from EDS and EDX analysis are given, and it is seen that the obtained film is indium selenide. It is shown that the energy of exciton bonding in ultrathin InSe films grown on the surface of a liquid is 300 meV.

中文翻译：

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获得硒化铟超薄膜的新方法

通过在真空中热蒸发硒化铟获得InSe的超薄膜。给出了EDS和EDX分析的结果，可见所得膜为硒化铟。结果表明，在液体表面生长的超薄InSe薄膜中的激子结合能为300 meV。