Abstract
Ultrathin films of InSe are obtained via the thermal evaporation of indium selenide in a vacuum. The results from EDS and EDX analysis are given, and it is seen that the obtained film is indium selenide. It is shown that the energy of exciton bonding in ultrathin InSe films grown on the surface of a liquid is 300 meV.
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Translated by N. Saetova
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Mamedov, R.M. A New Way of Obtaining Ultrathin Films of Indium Selenide. Russ. J. Phys. Chem. 94, 1272–1275 (2020). https://doi.org/10.1134/S0036024420060163
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DOI: https://doi.org/10.1134/S0036024420060163