Abstract

The electrical performance of thermophotovoltaic converters with a flip-chip design based on p-InAsSbP/n-InAs/n-InAsSbP double heterostructures with the substrate completely or partially removed is examined. The influence of resistance of different parts of the structure on the spatial distribution of current density in the active region is revealed, and the conditions for maximizing the efficiency of photocurrent collection and minimizing confluence are determined.

中文翻译：

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基于InAsSbP / InAs双异质结构的热电光伏转换器中电流的局部化

摘要

研究了基于p -InAsSbP / n -InAs / n -InAsSbP双重异质结构的倒装芯片设计的热光电转换器的电性能，该衬底完全或部分去除了衬底。揭示了结构的不同部分的电阻对有源区中电流密度的空间分布的影响，并确定了最大化光电流收集效率和最小化汇合的条件。