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Localization of Current Flow in Thermophotovoltaic Converters Based on InAsSbP/InAs Double Heterostructures

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Abstract

The electrical performance of thermophotovoltaic converters with a flip-chip design based on p-InAsSbP/n-InAs/n-InAsSbP double heterostructures with the substrate completely or partially removed is examined. The influence of resistance of different parts of the structure on the spatial distribution of current density in the active region is revealed, and the conditions for maximizing the efficiency of photocurrent collection and minimizing confluence are determined.

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ACKNOWLEDGMENTS

The authors wish to thank N.D. Il’inskaya, A.A. Usikova, N.M. Stus’, M.A. Remennyi, and S.A. Karandashev for their help and the staff at the Center of Multi-User Facilities, ‘‘Element Base of Microwave Photonics and Nanoelectronics: Technology, Diagnostics, Metrology” for studying the near-field intrinsic emission of the TPVCs.

Funding

The work at IoffeLED Ltd. was supported by the Federal targeted program “Development of Large-Sized Photosensitive Elements for the Spectral Ranges of 2.5–3.5, 2.5–4.5, and 2.5–5.5 μm Based on InAs Heterostructures and InAsSbP Solid Solutions” (contract code 14.576.21.0104, ID: RFMEFI57618X0104).

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    B. A. Matveev

  2. IoffeLED Ltd., 194064, St. Petersburg, Russia

    B. A. Matveev

  3. Volgodonsk Engineering and Technology Institute, Branch of National Research Nuclear University Moscow Engineering Physics Institute, 347360, Volgodonsk, Russia

    V. I. Ratushnyi & A. Yu. Rybal’chenko

Authors
  1. B. A. Matveev
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  2. V. I. Ratushnyi
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  3. A. Yu. Rybal’chenko
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Correspondence to B. A. Matveev.

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Translated by D. Safin

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Matveev, B.A., Ratushnyi, V.I. & Rybal’chenko, A.Y. Localization of Current Flow in Thermophotovoltaic Converters Based on InAsSbP/InAs Double Heterostructures. Tech. Phys. 65, 799–804 (2020). https://doi.org/10.1134/S1063784220050187

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  • DOI: https://doi.org/10.1134/S1063784220050187

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