Abstract

The effect of a set of quasi-neutral regimes of carrier transport in semiconductors, including, along with diffusion and drift, recently discovered diffusion stimulated by quasi-neutral drift, on the characteristics of structures is successively taken into account. The order of change in the carrier transport regimes in Schottky-diode structures is investigated and the features in the I–V characteristics caused by this change are established. The results of analytical study of these features are confirmed using numerical simulation.

中文翻译：

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高电流密度下大功率肖特基二极管的S形I–V特性

摘要

依次考虑了半导体中的一组准中性载流子传输机制，包括扩散和漂移以及最近发现的由准中性漂移激发的扩散对结构特性的影响。在肖特基二极管结构的载流子传输制度变化的顺序进行了研究，并在所述特征我- V由此引起的变化特性成立。这些特征的分析研究结果通过数值模拟得到证实。