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S-Shaped I–V Characteristics of High-Power Schottky Diodes at High Current Densities

  • PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

The effect of a set of quasi-neutral regimes of carrier transport in semiconductors, including, along with diffusion and drift, recently discovered diffusion stimulated by quasi-neutral drift, on the characteristics of structures is successively taken into account. The order of change in the carrier transport regimes in Schottky-diode structures is investigated and the features in the I–V characteristics caused by this change are established. The results of analytical study of these features are confirmed using numerical simulation.

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REFERENCES

  1. L. M. Hillkirk, Solid State Electron. 48, 2181 (2004).

    Article  ADS  Google Scholar 

  2. M. E. Levinshtein, T. T. Mnatsakanov, P. A. Ivanov, J. W. Palmour, M. K. Das, and B. A. Hull, Semicond. Sci. Technol. 23, 085011 (2008).

    Article  ADS  Google Scholar 

  3. J. W. Palmour, M. E. Levinshtein, P. A. Ivanov, and Q. J. Zhang, J. Phys. D: Appl. Phys. 48, 235103 (2015).

    Article  ADS  Google Scholar 

  4. D. L. Scharfetter, Solid State Electron. 8, 299 (1965).

    Article  ADS  Google Scholar 

  5. A. Yu and E. Snow, Solid State Electron. 12, 155 (1969).

    Article  ADS  Google Scholar 

  6. B. Elfsten and P. A. Tove, Solid State Electron. 28, 721 (1985).

    Article  ADS  Google Scholar 

  7. W. T. Ng, S. Liang, and C. A. T. Salama, Solid State Electron. 33, 39 (1990).

    Article  ADS  Google Scholar 

  8. K. Sarpatwari, S. E. Mohney, S. Ashok, and O. O. Awadelkarim, Phys. Status Solidi A 207, 1509 (2010).

    Article  ADS  Google Scholar 

  9. R. Singh, D. C. Capell, A. R. Hefner, J. Lai, and J. W. Palmour, IEEE Trans. Electron Dev. 49, 2054 (2002).

    Article  ADS  Google Scholar 

  10. J. H. Zhao, K. Sheng, and R. C. Lebron-Velilla, in SiC Materialsand Devices, Ed. by M. Shur, S. Rumyantsev, and M. Levinshtein (World Scientific, Singapore, New Jersey, 2006), Vol. 1, p. 117.

    Google Scholar 

  11. C. Buttay, C. Raynaud, H. Morel, G. Civrac, M.-L. Locatelli, and F. Morel, IEEE Trans. Electron Dev. 59, 761 (2012).

    Article  ADS  Google Scholar 

  12. T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, and S. N. Yurkov, J. Appl. Phys. 105, 044506 (2009).

    Article  ADS  Google Scholar 

  13. T. T. Mnatsakanov, A. G. Tandoev, M. E. Levinshtein, and S. N. Yurkov, Semicond. Sci. Technol. 24, 075006 (2009).

    Article  ADS  Google Scholar 

  14. T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, S. N. Yurkov, and J. W. Palmour, Solid State Electron. 121, 41 (2016).

    Article  ADS  Google Scholar 

  15. T. T. Mnatsakanov, A. G. Tandoev, M. E. Levinshtein, S. N. Yurkov, and J. W. Palmour, Semiconductors 51, 8 (2017).

    Article  Google Scholar 

  16. V. B. Shuman, T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, S. N. Yurkov, and J. W. Palmour, Semicond. Sci. Technol. 26, 085016 (2011).

    Article  ADS  Google Scholar 

  17. M. Lampert and P. Mark, Current Injection in Solids (Academic, New York, London, 1970).

    Google Scholar 

  18. T. T. Mnatsakanov, I. L. Rostovtsev, and N. I. Philatov, Solid State Electron. 30, 579 (1987).

    Article  ADS  Google Scholar 

  19. T. T. Mnatsakanov, Phys. Status Solidi B 143, 225 (1987).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. National Research University Moscow Power Engineering Institute (MPEI), 111250, Moscow, Russia

    A. G. Tandoev, T. T. Mnatsakanov & S. N. Yurkov

Authors
  1. A. G. Tandoev
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  2. T. T. Mnatsakanov
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  3. S. N. Yurkov
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Correspondence to T. T. Mnatsakanov.

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Translated by E. Bondareva

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Tandoev, A.G., Mnatsakanov, T.T. & Yurkov, S.N. S-Shaped I–V Characteristics of High-Power Schottky Diodes at High Current Densities. Semiconductors 54, 567–574 (2020). https://doi.org/10.1134/S1063782620050152

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  • DOI: https://doi.org/10.1134/S1063782620050152

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