Abstract

A set of structural and spectroscopic methods of diagnostics is used to study the influence of a nanoporous silicon (por-Si) transition layer on the practical implementation and specific features of growth of GaN layers on SiC/por-Si/c-Si templates by molecular-beam epitaxy with the plasma activation of nitrogen. It is shown that a por-Si transition layer introduced into a template, in which a 3C-SiC layer is created by the method of atom substitution, offers unquestionable advantages over standard silicon substrates. Specifically, such an approach makes it possible to lower the level of stresses in the crystal lattice of the epitaxial GaN layer by about 90% and to reduce the fraction of vertical dislocations in the GaN layer. The GaN layer is grown on the surface of the SiC layer, which in turn is on the surface of the SiC/por-Si/c-Si template. It is found for the first time that the use of the SiC/por-Si/c-Si template brings about the formation of a qualitatively more uniform GaN layer free of visible extended defects.

中文翻译：

---

纳米多孔硅层对SiC / por-Si / c-Si模板上GaN层的外延生长的实际实现和特定特征的影响

摘要

使用一套诊断的结构和光谱方法，研究了纳米多孔硅（por -Si）过渡层对SiC / por -Si / c -Si模板上GaN层的实际实现和特定生长特征的影响，方法是：分子束外延与等离子体激活氮。结果表明，在模板中引入了por -Si过渡层，其中3 C-SiC层是通过原子取代的方法产生的，与标准硅衬底相比，具有无可置疑的优势。具体地，这种方法使得可以将外延GaN层的晶格中的应力水平降低约90％，并且可以减小GaN层中的垂直位错的比例。GaN层生长在SiC层的表面上，而SiC层的表面又在SiC / por -Si / c -Si模板的表面上。首次发现，使用SiC / por -Si / c -Si模板可在质量上更均匀地形成无可见扩展缺陷的GaN层。