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Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates

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Abstract

A set of structural and spectroscopic methods of diagnostics is used to study the influence of a nanoporous silicon (por-Si) transition layer on the practical implementation and specific features of growth of GaN layers on SiC/por-Si/c-Si templates by molecular-beam epitaxy with the plasma activation of nitrogen. It is shown that a por-Si transition layer introduced into a template, in which a 3C-SiC layer is created by the method of atom substitution, offers unquestionable advantages over standard silicon substrates. Specifically, such an approach makes it possible to lower the level of stresses in the crystal lattice of the epitaxial GaN layer by about 90% and to reduce the fraction of vertical dislocations in the GaN layer. The GaN layer is grown on the surface of the SiC layer, which in turn is on the surface of the SiC/por-Si/c-Si template. It is found for the first time that the use of the SiC/por-Si/c-Si template brings about the formation of a qualitatively more uniform GaN layer free of visible extended defects.

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ACKNOWLEDGMENTS

We are grateful to the Karlsruhe Nano Micro Facility (KNMF, www.kit.edu/knmf) of Forschungszentrum Karlsruhe for providing access to the equipment at their laboratories.

Funding

The study was supported by the Russian Science Foundation, project no. 19-72-10007.

Access to the equipment of KNMF was supported by the President of the Russian Federation, grant no. MD-42.2019.2.

The part of the study performed by S.A. Kukushkin was supported by the Presidium of the Russian Academy of Sciences, program “Nanostructures: Physics, Chemistry, Biology, and Foundations of Technologies”, project no. NIOKTR AAAA-A19-119012490107-5.

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Authors and Affiliations

  1. Voronezh State University, 394018, Voronezh, Russia

    P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Lenshin & Yu. Yu. Khudyakov

  2. Ural Federal University, 620002, Ekaterinburg, Russia

    P. V. Seredin

  3. St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. M. Mizerov & S. N. Timoshnev

  4. Ioffe Institute, 194021, St. Petersburg, Russia

    I. N. Arsentyev

  5. Udmurt Federal Research Center, Ural Branch, Russian Academy of Sciences, 426000, Izhevsk, Russia

    A. N. Beltyukov

  6. Karlsruhe Nano Micro Facility, 76344, Eggenstein-Leopoldshafen, Germany

    Harald Leiste

  7. Institute for Problems of Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia

    S. A. Kukushkin

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  1. P. V. Seredin
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Correspondence to P. V. Seredin, A. M. Mizerov or I. N. Arsentyev.

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Translated by E. Smorgonskaya

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Seredin, P.V., Goloshchapov, D.L., Zolotukhin, D.S. et al. Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates. Semiconductors 54, 596–608 (2020). https://doi.org/10.1134/S1063782620050115

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