Abstract

This review describes general approaches for the simulation exposure and development stages of e-beam lithography (EBL). The general models of elastic and inelastic electron interactions with matter, which are used for the simulation of the EBL exposure stage, are presented. The empirical and theoretical models of the resist’s dissolution in wet developers are provided for the simulation of the EBL profile development stage. Also, the kinetic transport and Monte-Carlo simulation algorithms are described.

中文翻译：

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电子束光刻模拟技术

摘要

这篇综述描述了电子束光刻（EBL）的模拟曝光和显影阶段的一般方法。提出了弹性和非弹性电子与物质相互作用的一般模型，该模型用于模拟EBL暴露阶段。提供了在湿显影剂中抗蚀剂溶解的经验和理论模型，用于模拟EBL轮廓显影阶段。此外，还描述了动力学传输和蒙特卡洛模拟算法。