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E-Beam Lithography Simulation Techniques

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Abstract

This review describes general approaches for the simulation exposure and development stages of e-beam lithography (EBL). The general models of elastic and inelastic electron interactions with matter, which are used for the simulation of the EBL exposure stage, are presented. The empirical and theoretical models of the resist’s dissolution in wet developers are provided for the simulation of the EBL profile development stage. Also, the kinetic transport and Monte-Carlo simulation algorithms are described.

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Funding

This work was supported by the Russian Foundation for Basic Research, project no. 18-37-00472 and partially by the Ministry of Science and Higher Education of Russia, program no. 0066-2019-0004.

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Authors and Affiliations

  1. Valiev Institute of Physics and Technology, Russian Academy of Sciences, 117218, Moscow, Russia

    A. E. Rogozhin & F. A. Sidorov

  2. Moscow Institute of Physics and Technology, 141701, Dolgoprudny, Moscow oblast, Russia

    F. A. Sidorov

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Rogozhin, A.E., Sidorov, F.A. E-Beam Lithography Simulation Techniques. Russ Microelectron 49, 108–122 (2020). https://doi.org/10.1134/S1063739720010096

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