Abstract—

We have studied the structure and electrical properties of thin films based on the In₂O₃ semiconductor and carbon, grown by atomic layer deposition using ion-beam sputtering. The structure of the resultant materials, formed during layer-by-layer growth of island layers, is made up of nanocrystalline In₂O₃ granules distributed at random over amorphous carbon. The electrical transport properties of the In₂O₃/C thin films depend on their thickness. In the temperature range 80–300 K, the dominant electrical transport mechanism in the In₂O₃/C thin films of thickness h < 70 nm sequentially changes from variable range hopping between localized states in a narrow energy band near the Fermi level (between 80 and 120 K) to nearest neighbor hopping (between 120 and 250 K) and then to variable range hopping between localized states in the conduction band tail (between 250 and 300 K). The films of thickness h > 70 nm undergo a change from conduction associated with strong carrier localization to that due to the presence of percolation clusters formed by In₂O₃ nanocrystals, which shows up as a linear temperature dependence of conductivity, with a negative temperature coefficient.

中文翻译：

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In 2 O 3 / C薄膜的电学性质

摘要—

我们已经研究了基于In ₂ O ₃半导体和碳的薄膜的结构和电性能，该薄膜是通过使用离子束溅射的原子层沉积法生长的。在岛状层的逐层生长期间形成的所得材料的结构由随机分布在无定形碳上的纳米晶体In ₂ O ₃颗粒组成。In ₂ O ₃ / C薄膜的电传输性能取决于其厚度。在80–300 K的温度范围内，厚度为h的In ₂ O ₃ / C薄膜中的主要电传输机制<70 nm依次从在费米能级附近的窄能带中的局部状态之间的可变范围跳跃（介于80和120 K之间）到最近的邻居跳跃（120至250 K之间），然后变为导带尾部（介于250和300 K之间）。厚度h > 70 nm的薄膜经历了与强载流子局部化相关的传导变化，这归因于存在由In ₂ O ₃纳米晶体形成的渗流簇，这表现为电导率与温度呈线性线性关系，且温度为负值系数。