Abstract—
We have studied the structure and electrical properties of thin films based on the In2O3 semiconductor and carbon, grown by atomic layer deposition using ion-beam sputtering. The structure of the resultant materials, formed during layer-by-layer growth of island layers, is made up of nanocrystalline In2O3 granules distributed at random over amorphous carbon. The electrical transport properties of the In2O3/C thin films depend on their thickness. In the temperature range 80–300 K, the dominant electrical transport mechanism in the In2O3/C thin films of thickness h < 70 nm sequentially changes from variable range hopping between localized states in a narrow energy band near the Fermi level (between 80 and 120 K) to nearest neighbor hopping (between 120 and 250 K) and then to variable range hopping between localized states in the conduction band tail (between 250 and 300 K). The films of thickness h > 70 nm undergo a change from conduction associated with strong carrier localization to that due to the presence of percolation clusters formed by In2O3 nanocrystals, which shows up as a linear temperature dependence of conductivity, with a negative temperature coefficient.
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REFERENCES
Rakesh, A., Sharma, N., Maheshwar, Sh., and Sharon, M., Transparent conducting oxide films for various applications: a review, Rev. Adv. Mater. Sci., 2018, vol. 53, no. 1, pp. 79–89. https://doi.org/10.1515/rams-2018-0006
Morales-Masis, M., De Wolf, S., Woods-Robinson, R., Ager, J.W., and Ballif, C., Transparent electrodes for efficient optoelectronics, Adv. Electron. Mater., 2017, vol. 3, no. 5, paper 1 600 529. https://doi.org/10.1002/aelm.201600529
Ramanujam, J., Verma, A., Gonzalez-Diaz, B., and Guerrero-Lemus, R., Inorganic photovoltaics – planar and nanostructured devices, Prog. Mater. Sci., 2016, vol. 82, pp. 294–404. https://doi.org/10.1016/j.pmatsci.2016.03.005
Korotcenkov, G., Brinzari, V., and Cho, B.K., In2O3- and SnO2-based thin film ozone sensors: fundamentals, J. Sens., 2016, paper 3 816 094. https://doi.org/10.1155/2016/3816094
Derek, M.R., Sheikh, A.A., and Patricia, M.A., Nanoscale metal oxide-based heterojunctions for gas sensing: a review, Sens. Actuators, B, 2014, vol. 204, pp. 250–272. https://doi.org/10.1016/j.snb.2014.07.074
Sanctis, S., Krausmann, J., and Guhl, C., Stacked indium oxide/zinc oxide heterostructures as semiconductors in thin film transistor devices: a case study using atomic layer deposition, J. Mater. Chem., 2018, vol. 6, pp. 464–472. https://doi.org/10.1039/C7TC03724D
Park, J.W., So, H.S., Lee, H.M., Kim, H.J., Kim, H.K., and Lee, H., Transition from a nanocrystalline phase to an amorphous phase in In–Si–O thin films: the correlation between the microstructure and the optical properties, J. Appl. Phys., 2015, vol. 117, paper 155 305. https://doi.org/10.1063/1.4918658/
Mitoma, N., Aikawa, S., Gao, X., Kizu, T., Shimizu, M., Lin, M.F., Nabatame, T., and Tsukagoshi, T., Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies, Appl. Phys. Lett., 2014, vol. 104, paper 102 103. https://doi.org/10.1063/1.4868303
Del Valle, J., Ramírez, J.G., Rozenberg, M.J., and Schuller, I.K., Challenges in materials and devices for resistive-switching-based neuromorphic computing, J. Appl. Phys., 2018, vol. 124, paper 211 101. https://doi.org/10.1063/1.5047800
Zhilova, O.V., Pankov, S., Sitnikov, A.V., Kalinin, Yu.E., Kashirin, M.A., and Makagonov, V.A., Optical and electrical properties of thin-film hetero-structures of the In2O3–ZnO system, Mater. Res. Express, 2019, vol. 6, paper 086 330. https://doi.org/10.1088/2053-1591/ab2721
Lee, S.J., Hwang, C.S., Pi, J.E., Yang, J.H., Byun, C.W., Chu, H.Y., Cho, K.I., and Cho, S.H., High-performance amorphous multilayered ZnO–SnO2 heterostructure thin-film transistors: fabrication and characteristics, ETRI J, 2015, vol. 37, pp. 1135–1142. https://doi.org/10.4218/etrij.15.0114.0743
Zhilova, O.V., Pankov, S.Yu., Sitnikov, A.V., Kalinin, Yu.E., Volochaev, M.N., and Makagonov, V.A., Structure and electrophysical properties of thin-film SnO2–In2O3 heterostructures, J. Mater. Sci.–Mater. Electron., 2019, vol. 30, pp. 11859–11867. https://doi.org/10.1007/s10854-019-01503-w
Cui, G., Han, D., Dong, J., Cong, Y., Zhang, X., Li, H., Yu, W., Zhang, S., Zhang, X., and Wang, Y., Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition, Jpn. J. Appl. Phys., 2017, vol. 56, paper 04CG03. https://doi.org/10.7567/JJAP.56.04CG03
Kalinin, Yu.E., Zhilova, O.V., Babkina, I.V., Sitnikov, A.V., Makagonov, V.A., and Remizova, O.I., Effect of heat treatment on the electrical properties of thin yttrium-doped In2O3 films, Inorg. Mater., 2018, vol. 54, no. 9, pp. 936–942. https://doi.org/10.1134/S0020168518090030
Suchea, M., Katsarakis, N., Christoulakis, S., Nikolopoulou, S., and Kiriakidis, G., Low temperature indium oxide gas sensors, Sens. Actuators, B, 2006, vol. 118, pp. 135–141. https://doi.org/10.1016/j.snb.2006.04.020
Rylkov, V.V., Nikolaev, S.N., Chernoglazov, K.Yu., Demin, V.A., Sitnikov, A.V., Presnyakov, M.Yu., Vasiliev, A.L., Perov, N.S., Vedeneev, A.S., Kalinin, Yu.E., Tugushev, V.V., and Granovsky, A.B., Tunneling anomalous Hall effect in nanogranular CoFe–B–Al–O films near the metal–insulator transition, Phys. Rev. B: Condens. Matter Mater. Phys., 2017, vol. 95, paper 144 202. https://doi.org/10.1103/PhysRevB.95.144202
Kalinin, Yu.E., Kashirin, M.A., Makagonov, V.A., Pankov, S.Yu., and Sitnikov, A.V., Properties of amorphous carbon thin films grown by ion beam sputtering, Tech. Phys., 2017, vol. 62, no. 11, pp. 1724-1730. https://doi.org/10.1134/S1063784217110123
Zhilova, O.V., Pankov, S.Yu., Sitnikov, A.V., Kalinin, Yu.E., and Babkina, I.V., The structure and the gas sensitive properties of the thin films of zinc oxide, AIP Conf. Proc., 2017, vol. 1886, paper 020 054. https://doi.org/10.1063/1.5002951
Zhilova, O.V., Pankov, S.Y., Sitnikov, A.V., Kalinin, Y.E., and Babkina, I.V., The structure and electrical properties of In2O3–C heterogeneous system, AIP Conf. Proc., 2018, vol. 2015, paper 020 123. https://doi.org/10.1063/1.5055196
Bondarenko, V.B. and Filimonov, A.V., Criterion for strong localization on a semiconductor surface in the Thomas–Fermi approximation, Semiconductors, 2017, vol. 51, no. 10, pp. 1321–1325. https://doi.org/10.1134/S1063782617100062
Mott, N. and Davis, E., Electronic Processes in Non-Crystalline Materials, Oxford: Clarendon, 1979.
Lin, J.J. and Li, Z.Q., Electronic conduction properties of indium tin oxide: single-particle and many-body transport, J. Phys.: Condens. Matter, 2014, vol. 26, no. 34, paper 343 201. https://doi.org/10.1088/0953-8984/26/34/343201
Suzuki K., Fuzimori, H., and Hashimoto, K., Amorfnye metally (Amorphous Metals), Moscow: Metallurgiya, 1987 (translated from Japanese).
Polyanskaya, T.A. and Shmartsev, Yu.V., Quantum correction to the conductivity of semiconductor with a two-dimensional and a 3-dimensional electron-gas. Experiments, Phys. Tekh. Poluprovodn., 1989, vol. 23, no. 1, pp. 3–32.
Bartolomeo, D., Sarno, M., Giubileo, F., Altavilla, C., Iemmo, L., Piano, S., Bobba, F., Longobardi, M., Scarfato, A., Sannino, D., Cucolo, A.M., and Ciambelli, P., Multiwalled carbon nanotube films as small-sized temperature sensors, J. Appl. Phys., 2009, vol. 105, paper 064 518. https://doi.org/10.1063/1.3093680
Zhilova, O.V., Makagonov, V.A., and Pankov, S.Yu., Structure of thin films of carbon-modified In2O3 and ZnO wide-band-gap semiconductors, Vestn. Voronezhsk. Gos. Tekh. Univ., 2018, vol. 14, no. 4, pp. 168–173.
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This work was supported by the Russian Federation Ministry of Science and Higher Education (state research target, project no. 3.1867, 2017/4.6).
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Babkina, I.V., Volochaev, M.N., Zhilova, O.V. et al. Electrical Properties of Thin In2O3/C Films. Inorg Mater 56, 374–381 (2020). https://doi.org/10.1134/S0020168520040019
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DOI: https://doi.org/10.1134/S0020168520040019