In the present work, we numerically investigate the optical properties of GaAs/Al_xGa_1−xAs Thue–Morse multiple-quantum-well systems (TM-MQWs) in the presence of an external electric field. We study the effects of the layers arrangements, total system length, number of layers and composition parameter x on the optical rectification coefficient of the TM-MQWs. We also consider three structural cases within which the system can be fabricated by repeating two, three or four composition parameters x₁, x₂, x₃ and x₄ in the adjacent layers. The most tunable ORC amplitude is due to the systems containing four different composition parameters and least tunable one is the systems which contain two different composition parameters. By increasing the number of layers, the ORC peak position periodically redshifts and blueshifts. We also show that by using the number of layers, total system length and composition parameter x, the ORC peak amplitudes are greatly tunable in a considerably large interval. This fact shows that the Thue–Morse MQWs are suitable candidates for optoelectronic device applications.

在本工作中，我们在存在外部电场的情况下，数值研究了GaAs / Al _x Ga ₁ - _x As Thue-Morse多量子阱系统（TM-MQWs）的光学性质。我们研究了层排列，总系统长度，层数和成分参数x对TM-MQW的光学整流系数的影响。我们还考虑了三种结构情况，可以在其中通过重复两个，三个或四个组成参数x ₁，x ₂，x ₃和x _{4来制造系统}在相邻的层中。ORC幅度最大可调的原因是系统包含四个不同的成分参数，而可调性最小的是包含两个不同成分参数的系统。通过增加层数，ORC峰值位置会周期性地红移和蓝移。我们还表明，通过使用层数，系统总长度和组成参数x，ORC峰值幅度可以在相当大的间隔内极大地调节。这一事实表明，Thue-Morse MQW适合用于光电设备应用。