In this work, we report a 2-D analytical model for threshold voltage and drain current of fully depleted silicon-on-insulator (SoI) metal oxide semiconductor field-effect transistor (MOSFET) with lightly doped N- underneath the N+ source region. This model considers the effect of oxide thickness, source doping variations and silicon film thickness. The accuracy of the proposed model is verified using 2-D numerical simulations in terms of surface potential, threshold voltage and drain current. In comparison with the conventional FD SOI devices, the proposed model predicts that modified source based FD SOI structure gives better OFF-state current, improved ON-state to OFF-state current (I_ON/I_OFF ~ 10⁹) ratio.

在这项工作中，我们报告了一个二维分析模型，用于在N +源极区域下方具有轻掺杂N-的完全耗尽的绝缘体上硅（SoI）金属氧化物半导体场效应晶体管（MOSFET）的阈值电压和漏极电流。该模型考虑了氧化物厚度，源极掺杂变化和硅膜厚度的影响。使用二维数值模拟在表面电势，阈值电压和漏极电流方面验证了所提出模型的准确性。与常规SOI FD装置相比，所提出的模型预测，修改后的源基于FD SOI结构提供了更好的OFF态电流，ON状态提高到断开状态电流（I _ON / I _OFF  〜10 ⁹）的比。