In this article, an investigation has been done to address the resistance and reliability issues with Conventional Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor (Conv. JL DG MOSFET). Due to the uniform doping (concentration range is 1 × 10¹⁸ cm⁻³-1 × 10¹⁹ cm⁻³) in Conv. JL DG MOSFET, the contact resistance at source and drain region is large which degrades the performance of devices. The increment in doping of source and drain region reduces the contact resistance but simultaneously it increases leakage in Conv. JL DG MOSFET. To address above mentioned issues, a new architecture has been discussed which is called Core-Shell Channel (CSC) JL DG MOSFET. The CSC JL DG MOSFET is offering low leakage current with highly doped concentration of impurity in source and drain. The first time electrostatic discharge (ESD) reliability investigation has been done for any JL MOSFET and CSC JL DG MOSFET.

在本文中，已经进行了研究以解决常规双栅极金属氧化物半导体场效应晶体管（Conv。JL DG MOSFET）的电阻和可靠性问题。由于掺杂均匀（浓度范围为1×10 ¹⁸ cm ^-3 -1×10 ¹⁹ cm ^-3）中的转化 JL DG MOSFET，源极和漏极区域的接触电阻很大，这会降低器件的性能。源极和漏极区域掺杂的增加会降低接触电阻，但同时会增加Conv中的泄漏。JL DG MOSFET。为了解决上述问题，已经讨论了一种称为核壳通道（CSC）JL DG MOSFET的新架构。CSC JL DG MOSFET提供低泄漏电流，并且源极和漏极中的杂质浓度很高。首次对任何JL MOSFET和CSC JL DG MOSFET进行了静电放电（ESD）可靠性研究。