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Resistances and ESD Reliability Study of Core-Shell Channel Junctionless DG MOSFET

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Abstract

In this article, an investigation has been done to address the resistance and reliability issues with Conventional Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor (Conv. JL DG MOSFET). Due to the uniform doping (concentration range is 1 × 1018 cm−3-1 × 1019 cm−3) in Conv. JL DG MOSFET, the contact resistance at source and drain region is large which degrades the performance of devices. The increment in doping of source and drain region reduces the contact resistance but simultaneously it increases leakage in Conv. JL DG MOSFET. To address above mentioned issues, a new architecture has been discussed which is called Core-Shell Channel (CSC) JL DG MOSFET. The CSC JL DG MOSFET is offering low leakage current with highly doped concentration of impurity in source and drain. The first time electrostatic discharge (ESD) reliability investigation has been done for any JL MOSFET and CSC JL DG MOSFET.

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Acknowledgments

Author would like to thank Advanced Nanoelectronic Device & Circuit Research Group, Indian Institute of Science, Bangalore, and Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi to use their resources and support.

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  1. Advanced Nanoelectronic Device & Circuit Characterization Research Group, Department of Electronics System Engineering, Indian Institute of Science, Bangalore, 560012, India

    Ajay

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Correspondence to Ajay.

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Ajay Resistances and ESD Reliability Study of Core-Shell Channel Junctionless DG MOSFET. Silicon 13, 1325–1329 (2021). https://doi.org/10.1007/s12633-020-00527-w

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  • DOI: https://doi.org/10.1007/s12633-020-00527-w

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