The rarely reported defects with crack-and-fold (CAF) style graphene grown on raw Cu foils substrates by chemical vapor deposition (CVD) were examined in this study. Factors for the formation of CAF defects were explored by performing different substrate treatments and varied hydrogen inflow. A clear relationship was found between CAF defects and Cu (110) facets by electron back-scattered diffraction measurement. CAF defects were affected by the interaction between graphene and the substrate. A model with a two-step process, including cracking and folding, is established to elucidate the formation of CAF defects. CAF defects can be reduced by performing substrate treatment, varying hydrogen flow and controlling the orientation of the Cu substrate. This study was performed to improve the quality of graphene grown by CVD for industrial production.

在这项研究中，检查了很少报道的通过化学气相沉积（CVD）在原始Cu箔基板上生长的裂纹和折叠（CAF）型石墨烯的缺陷。通过执行不同的基板处理和变化的氢气流入来探索形成CAF缺陷的因素。通过电子背散射衍射测量发现了CAF缺陷和Cu（110）面之间的明确关系。CAF缺陷受石墨烯与基材之间相互作用的影响。建立了包括裂纹和折叠两步过程的模型，以阐明CAF缺陷的形成。通过执行基板处理，改变氢气流量并控制Cu基板的方向，可以减少CAF缺陷。进行这项研究是为了改善通过CVD生产的石墨烯的工业生产质量。