Sn_xBi_0.5-xSb_1.5Te₃ materials with high ZT values were prepared by vacuum melting, ball milling, cold pressing and ambient pressure sintering. The effect of Sn doping amount on the thermoelectric performance of Bi_0.5Sb_1.5Te₃ -based materials was investigated. The results showed that Sn doping increased the carrier concentration and DOS effective mass to improve the electrical conductivity and Seebeck coefficient, respectively, resulting in an increase in the power factor. Meanwhile, the reduction in lattice thermal conductivity was attributed to enhanced phonon scattering. The decrease in bipolar thermal conductivity was caused by the suppression of intrinsic excitation. Finally, compared with Bi_0.5Sb_1.5Te₃, the power factor increased 66%, to 2.72 mW·m⁻¹·K⁻², lattice thermal conductivity decreased by 28% to 0.334 W·m⁻¹·K⁻¹, and the ZT value for Sn_0.01Bi_0.49Sb_1.5Te₃ at 350 K was 1.33.

通过真空熔融，球磨，冷压和环境压力烧结制备具有高ZT值的Sn _x Bi _{0.5- x} Sb _1.5 Te ₃材料。Sn掺杂量对Bi _0.5 Sb _1.5 Te ₃热电性能的影响基材料进行了调查。结果表明，Sn掺杂分别提高了载流子浓度和DOS有效质量，从而分别提高了电导率和塞贝克系数，从而导致了功率因数的提高。同时，晶格热导率的降低归因于声子散射的增强。双极热导率的降低是由于固有激励的抑制引起的。最后，与Bi _0.5 Sb _1.5 Te _3相比，功率因数增加了66％，达到2.72 mW·m ^-1 ·K ^-2，晶格热导率下降了28％，达到0.334 W·m ^-1 ·K ^-1，并且Sn的ZT值在350 K下的_0.01 Bi _0.49 Sb _1.5 Te ₃为1.33。