An inexpensive spray pyrolysis technique was effectively used to form a p-type SnSb₂S₄ thin film on n-type Si wafer for the first time to produce SnSb₂S₄/n-Si heterojunction. The capacitance-voltage estimations of the SnSb₂S₄/n-Si heterojunction have been recorded in the dark condition at 1 MHZ and demonstrated that the junction has an abrupt junction behavior. The dark current-voltage curve showed that the SnSb₂S₄/ n-Si heterojunction exhibits good rectifying properties. The device parameters represented in the series resistance (R_s) and ideality factor (n) were obtained from the current-voltage estimations in the dark conditions. In addition, the calculated values of ideality factor (n) establish to be greater than unity and they were decreased by rising the annealed temperature. According to the illumination condition with an intensity of 100 mW/cm², we calculate the fill factor (FF), open-circuit voltage (V_OC) and the solar efficiency (η) for the SnSb₂S₄/ n-Si heterojunction.

廉价的喷雾热解技术首次被有效地用于在n型Si晶片上形成p型SnSb ₂ S ₄薄膜，以生产SnSb ₂ S ₄ / n-Si异质结。SnSb ₂ S ₄ / n-Si异质结的电容电压估计已在黑暗条件下以1 MHZ记录下来，并证明该结具有突变的结行为。暗电流-电压曲线表明，SnSb ₂ S ₄ / n-Si异质结表现出良好的整流性能。器件参数以串联电阻（R _s）和理想因数（n）是从黑暗条件下的电流-电压估计中获得的。此外，理想因子（n）的计算值确定为大于1，并且随着退火温度的升高而减小。根据具有100毫瓦/平方厘米的强度的照明条件²，我们计算填充因子（FF），开路电压（V _OC）和太阳能效率（η）为SnSb系₂小号₄ /正Si异质。