Accurate reference dielectric functions play an important role in the research and development of optical materials. Libraries of such data are required in many applications in which amorphous semiconductors are gaining increasing interest, such as in integrated optics, optoelectronics or photovoltaics. The preparation of materials of high optical quality in a reproducible way is crucial in device fabrication. In this work, amorphous Ge (a-Ge) was created in single-crystalline Ge by ion implantation. It was shown that high optical density is available when implanting low-mass Al ions using a dual-energy approach. The optical properties were measured by multiple angle of incidence spectroscopic ellipsometry identifying the Cody-Lorentz dispersion model as the most suitable, that was capable of describing the dielectric function by a few parameters in the wavelength range from 210 to 1690 nm. The results of the optical measurements were consistent with the high material quality revealed by complementary Rutherford backscattering spectrometry and cross-sectional electron microscopy measurements, including the agreement of the layer thickness within experimental uncertainty.

中文翻译：

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椭圆偏振光谱法测定离子注入的非晶态锗的复介电功能

准确的参考介电功能在光学材料的研究和开发中起着重要作用。在非晶半导体越来越受到关注的许多应用中，例如在集成光学，光电或光伏领域，都需要这样的数据库。以可再现的方式制备高光学质量的材料对于设备制造至关重要。在这项工作中，通过离子注入在单晶Ge中生成了非晶Ge（a-Ge）。结果表明，当使用双能方法注入低质量的Al离子时，可获得较高的光密度。光学特性是通过多角度椭圆偏振光谱法测量的，确定了Cody-Lorentz色散模型是最合适的，它能够通过210至1690 nm波长范围内的几个参数来描述介电函数。光学测量的结果与互补的卢瑟福背散射光谱法和截面电子显微镜测量所揭示的高材料质量一致，包括在实验不确定性范围内的层厚度一致性。