The structural model and fabrication process of the Si-based blocked-impurity-band (BIB) detector were proposed. The numerical simulation of phosphorus ion implantation and rapid thermal annealing was investigated. Various implantation conditions were analyzed to meet the requirements of good electrical contact. Moreover, the carrier activation effect of phosphorus ion implantation and rapid thermal annealing was demonstrated by Hall test. Then the relationship between blackbody responsivity and annealing temperature was analyzed. According to the measurement results, the blackbody responsivity and response wavelength range of Si-based BIB detector we fabricated can reach 2.2A/W and 5–45 μm, respectively. Our work shows that the good electrical contact can improve the blackbody responsivity. It provides an effective method to fabricate Si-based BIB detector with good performances.

中文翻译：

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硅基阻挡杂质带探测器的制作工艺及光电性能研究

提出了硅基阻挡杂质带(BIB)探测器的结构模型和制作工艺。研究了磷离子注入和快速热退火的数值模拟。分析了各种植入条件以满足良好电接触的要求。此外，通过霍尔测试证明了磷离子注入和快速热退火的载流子激活效应。然后分析了黑体响应度与退火温度的关系。根据测量结果，我们制造的Si基BIB探测器的黑体响应度和响应波长范围分别可以达到2.2A/W和5-45μm。我们的工作表明，良好的电接触可以提高黑体响应度。