Abstract
The structural model and fabrication process of the Si-based blocked-impurity-band (BIB) detector were proposed. The numerical simulation of phosphorus ion implantation and rapid thermal annealing was investigated. Various implantation conditions were analyzed to meet the requirements of good electrical contact. Moreover, the carrier activation effect of phosphorus ion implantation and rapid thermal annealing was demonstrated by Hall test. Then the relationship between blackbody responsivity and annealing temperature was analyzed. According to the measurement results, the blackbody responsivity and response wavelength range of Si-based BIB detector we fabricated can reach 2.2A/W and 5–45 μm, respectively. Our work shows that the good electrical contact can improve the blackbody responsivity. It provides an effective method to fabricate Si-based BIB detector with good performances.
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Acknowledgements
This work was sponsored by the National Natural Science Foundation of China (Grant Nos. 61705201), Shanghai Sailing Program (Grant No. 17YF1418100), Shanghai Rising-Star Program (Grant No. 17QB1403900), Young Elite Scientists Sponsorship Program by CAST (Grant No. 2018QNRC001), and Natural Science Foundation of Shanghai (17ZR1428500).
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Wang, B., Wang, X., Chen, Y. et al. Study on the fabrication process and photoelectric performances of si-based blocked-impurity-band detector. Opt Quant Electron 52, 272 (2020). https://doi.org/10.1007/s11082-020-02335-3
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DOI: https://doi.org/10.1007/s11082-020-02335-3