Abstract

Reflectance spectra of thin Pb_{1 –x}Sn_xTe films (~60 nm) with x = 0.25, 0.53, and 0.59, grown by MBE on hybrid GaAs/CdTe substrates, are measured in the frequency range of 20–5500 cm^–1 and the temperature range of 5–300 K. The temperature dependence of transverse optical phonon frequencies and structural phase transition temperatures are determined based on a dispersion analysis. An increase in the plasma frequency with decreasing temperature in the range 300‒77 K in all films is detected.

中文翻译：

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GaAs / CdTe杂化衬底上MBE生长的Pb 1-x Sn x Te薄膜振动模式的温度依赖性

摘要

由MBE在GaAs / CdTe混合衬底上生长的Pb _{1 – x} Sn _x Te薄膜（〜60 nm）（x = 0.25、0.53和0.59 ）的反射光谱是在20–5500 cm ^–1的频率范围内测量的温度范围为5–300K。横向光学声子频率和结构相变温度的温度依赖性是根据色散分析确定的。在所有薄膜中，随着温度降低，在300‒77 K范围内，等离子体频率会增加。