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Temperature Dependence of the Vibrational Mode of Pb1 –xSnxTe Films Grown by MBE on the GaAs/CdTe Hybrid Substrate

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Abstract

Reflectance spectra of thin Pb1 –xSnxTe films (~60 nm) with x = 0.25, 0.53, and 0.59, grown by MBE on hybrid GaAs/CdTe substrates, are measured in the frequency range of 20–5500 cm–1 and the temperature range of 5–300 K. The temperature dependence of transverse optical phonon frequencies and structural phase transition temperatures are determined based on a dispersion analysis. An increase in the plasma frequency with decreasing temperature in the range 300‒77 K in all films is detected.

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Funding

Yu. A. Aleshchenko acknowledges the support of the Program of Competitive Growth of the National Research Nuclear University “MEPhI” (contract no. 02.a03.21.0005). Temperature dependences of the reflectance spectra were measured by A.V. Muratov within the State contract of the Ministry of Science and Higher Education of the Russian Federation (subject “Physics of High-Temperature Superconductors and New Quantum Materials,” no. 0023-2019-0005.

The study in Poland was in part supported by the National Scientific Center of Poland, (grants no. 2017/25/B/ST3/02966 and 2018/30/M/ST3/00276). The study in Germany was in part supported by Grant SFB 1170 “ToCoTronics.”

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Correspondence to I. V. Kucherenko.

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Translated by A. Kazantsev

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Yakovlev, V.A., Schreyeck, S., Muratov, A.V. et al. Temperature Dependence of the Vibrational Mode of Pb1 –xSnxTe Films Grown by MBE on the GaAs/CdTe Hybrid Substrate. Bull. Lebedev Phys. Inst. 47, 16–22 (2020). https://doi.org/10.3103/S106833562001008X

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