In_0.1Ga_0.9N thin film was grown on a cheap glass substrate by the Nd:YAG pulsed laser deposition technique. The In_0.1Ga_0.9N thin films show the semi-crystalline structure as observed with X-ray diffraction (XRD). The surface morphology has a non-dense layer with both scattered nanospheres and agglomerated particles. These nanospheres tended to grow randomly on the glass substrate, as observed with field emission scanning electron microscopy (FESEM). The direct bandgap energy for In_0.1Ga_0.9N thin film was 2.08 eV, which is calculated using photoluminescence (PL) measurements. The Raman measurements illustrated two sets of phonon modes as A1(LO) and E2 high vibrational modes that are observed. The resonance behavior of the A1(LO) mode is experimentally verified and studied under laser light energy of 532 nm.

中文翻译：

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Nd：YAG技术用于In0.1Ga0.9N纳米形状的脉冲激光沉积

在_0.1镓_0.9 N薄膜生长由ND一个廉价的玻璃基片上：YAG脉冲激光沉积技术。如通过X射线衍射（XRD）观察到的，In _0.1 Ga _0.9 N薄膜显示出半结晶结构。表面形态具有不致密的层，既具有分散的纳米球又具有聚集的颗粒。如通过场发射扫描电子显微镜（FESEM）观察到的，这些纳米球倾向于在玻璃基板上随机生长。In _0.1 Ga _0.9的直接带隙能N薄膜为2.08eV，其使用光致发光（PL）测量来计算。拉曼测量显示了两组声子模式，分别为A1（LO）和E2高振动模式。在532 nm的激光能量下，通过实验验证和研究了A1（LO）模式的共振行为。