Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy (PMA), voltage-controlled magnetic anisotropy (VCMA), and interface magnetoelectric (ME) effect. High interfacial PMA of 1.35 mJ/m², VCMA coefficient of −138 fJ/(V m), and interface ME coefficient, which is 2–3 orders of magnitude larger than ab initio calculation results are simultaneously achieved after annealing at 500°C. These promising results enabled by the industry-applicable sputtering process will pave the way for high-density voltage-controlled spintronic devices.

中文翻译：

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高温退火溅射多层的高压控制磁各向异性和界面磁电效应

磁性的电压控制有望在写入磁性存储器时提高能源效率。在这里，使用在高达590°C的高退火温度下稳定的Cr / Mo / CoFeB / MgO多层，我们显着提高了界面结晶度，从而实现了界面起源的垂直磁各向异性（PMA），压控磁各向异性（VCMA），和界面磁电（ME）效应。在500°C退火后，同时获得了从头算的结果，同时实现了1.35 mJ / m ^2的高界面PMA，-138 fJ /（V m）的VCMA系数和界面ME系数。。这些可通过工业应用的溅射工艺实现的有希望的结果将为高密度压控自旋电子器件铺平道路。