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High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures

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Abstract

Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy (PMA), voltage-controlled magnetic anisotropy (VCMA), and interface magnetoelectric (ME) effect. High interfacial PMA of 1.35 mJ/m2, VCMA coefficient of −138 fJ/(V m), and interface ME coefficient, which is 2–3 orders of magnitude larger than ab initio calculation results are simultaneously achieved after annealing at 500°C. These promising results enabled by the industry-applicable sputtering process will pave the way for high-density voltage-controlled spintronic devices.

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Author notes

  1. These authors contributed equally to this work.

Authors and Affiliations

  1. Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, 100191, China

    LeZhi Wang

  2. School of Computer Science & Engineering, Beihang University, Beijing, 100191, China

    LeZhi Wang

  3. Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, 90095, USA

    LeZhi Wang, Xiang Li, Kin Wong, GuoQiang Yu & KangLong Wang

  4. School of Microelectronics, Beihang University, Beijing, 100191, China

    ShouZhong Peng & WeiSheng Zhao

  5. Inston, Inc., Los Angeles, 90095, USA

    Xiang Li

  6. National Institute for Materials Science (NIMS), Tsukuba, 305-0047, Japan

    Taisuke Sasaki, Tadakatsu Ohkubo & Kazuhiro Hono

  7. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Chao Zhao

Authors
  1. LeZhi Wang
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  2. Xiang Li
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  3. Taisuke Sasaki
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  4. Kin Wong
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  10. WeiSheng Zhao
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  11. KangLong Wang
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Corresponding authors

Correspondence to Xiang Li or KangLong Wang.

Additional information

This work was supported by the NSF Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS), and a Phase II NSF Small Business Innovation Research award. We would like to acknowledge the collaboration of this research with the King Abdul-Aziz City for Science and Technology (KACST) via the Center of Excellence for Green Nanotechnologies (CEGN). This work was partially supported by the Energy Frontier Research Center for Spins and Heat in Nanoscale Electronic Systems (SHINES). LeZhi Wang would like to thank the support of China Scholarship Council (CSC). The authors would also like to acknowledge ChunGang Duan and WeiGang Wang for fruitful discussions.

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High Voltage-Controlled Magnetic Anisotropy and Interface Magnetoelectric Effect in Sputtered Multilayers Annealed at High Temperatures

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Wang, L., Li, X., Sasaki, T. et al. High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures. Sci. China Phys. Mech. Astron. 63, 277512 (2020). https://doi.org/10.1007/s11433-019-1524-y

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  • DOI: https://doi.org/10.1007/s11433-019-1524-y

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