An experimental study was conducted to investigate the interfaciale adhesion between molten silicon and TiB₂, ZrB₂ and HfB₂ ceramics by using the sessile drop technique. Contact angle measurements were performed as a function of wetting time at 1703 °C. The interface between silicon and ceramic was analyzed using SEM-EDS. The dependence of adhesion energy, W_ad, on elastic parameters of these systems was investigated. Different approaches are used and semi-empirical relations are deduced for all systems. It is shown that, in all cases, the adhesion energy increases linearly with Rayleigh velocities of ceramic substrate, V_RC; it takes the form: W_ad. = 0.07 V_RC + C. Where the first term of this equation represents the Van der Waals, W_VDW, contribution of W_ad, it is only depends on V_RC. However, the second term represent the chemical equilibrium term, W_chem-equil, is strongly depends on the system combination as well as on the energy gap of the ceramics substrate. Moreover, W_chem-equil is higher for small bandgap ceramic materials due to big density inside ceramic crystal; consequently, ease and height electron transfer through the metal/ceramic interface. On the other hand, a new phenomenon takes place in silicon/large bandgap ceramics interfaces which is the generation of the interface states density that occur from electrons-holes recombination. This interfacial phenomenon depends on energy bandgap of ceramic which explained the variation of W_chem-equil values for large bandgap ceramic materials.

通过固溶滴技术进行了实验研究，以研究熔融硅与TiB ₂，ZrB ₂和HfB ₂陶瓷之间的界面粘附性。接触角的测量是在1703°C下润湿时间的函数。使用SEM-EDS分析了硅和陶瓷之间的界面。研究了粘附能W _ad对这些系统的弹性参数的依赖性。使用了不同的方法，并推导了所有系统的半经验关系。结果表明，在所有情况下，附着力均随陶瓷基板的瑞利速度V _RC线性增加。它采用以下形式：W _ad。= 0.07 V _RC  + C。该方程式的第一项代表范德华力W _VDW，W _ad的贡献，它仅取决于V _RC。但是，第二项代表化学平衡项W _chem-equil，在很大程度上取决于系统组合以及陶瓷基材的能隙。而且，W _chem-equil对于带隙小的陶瓷材料，由于陶瓷晶体内部密度高，该值更高；因此，电子通过金属/陶瓷界面易于转移并高度转移。另一方面，在硅/大带隙陶瓷界面中发生了新现象，这是由于电子-空穴复合而产生的界面态密度的产生。这种界面现象取决于陶瓷的能带隙，该能带隙解释了大带隙陶瓷材料的W _Chem-Equil值的变化。