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Investigation of Adhesion Mechanism in Molten Silicon/Ceramics Systems
Silicon ( IF 2.8 ) Pub Date : 2020-05-02 , DOI: 10.1007/s12633-020-00440-2
Zakaria Hadef , Kenza Kamli

An experimental study was conducted to investigate the interfaciale adhesion between molten silicon and TiB2, ZrB2 and HfB2 ceramics by using the sessile drop technique. Contact angle measurements were performed as a function of wetting time at 1703 °C. The interface between silicon and ceramic was analyzed using SEM-EDS. The dependence of adhesion energy, Wad, on elastic parameters of these systems was investigated. Different approaches are used and semi-empirical relations are deduced for all systems. It is shown that, in all cases, the adhesion energy increases linearly with Rayleigh velocities of ceramic substrate, VRC; it takes the form: Wad. = 0.07 VRC + C. Where the first term of this equation represents the Van der Waals, WVDW, contribution of Wad, it is only depends on VRC. However, the second term represent the chemical equilibrium term, Wchem-equil, is strongly depends on the system combination as well as on the energy gap of the ceramics substrate. Moreover, Wchem-equil is higher for small bandgap ceramic materials due to big density inside ceramic crystal; consequently, ease and height electron transfer through the metal/ceramic interface. On the other hand, a new phenomenon takes place in silicon/large bandgap ceramics interfaces which is the generation of the interface states density that occur from electrons-holes recombination. This interfacial phenomenon depends on energy bandgap of ceramic which explained the variation of Wchem-equil values for large bandgap ceramic materials.



中文翻译:

熔融硅/陶瓷体系中粘合机理的研究

通过固溶滴技术进行了实验研究,以研究熔融硅与TiB 2,ZrB 2和HfB 2陶瓷之间的界面粘附性。接触角的测量是在1703°C下润湿时间的函数。使用SEM-EDS分析了硅和陶瓷之间的界面。研究了粘附能W ad对这些系统的弹性参数的依赖性。使用了不同的方法,并推导了所有系统的半经验关系。结果表明,在所有情况下,附着力均随陶瓷基板的瑞利速度V RC线性增加。它采用以下形式:W ad。= 0.07 V RC  + C。该方程式的第一项代表范德华力W VDWW ad的贡献,它仅取决于V RC。但是,第二项代表化学平衡项W chem-equil,在很大程度上取决于系统组合以及陶瓷基材的能隙。而且,W chem-equil对于带隙小的陶瓷材料,由于陶瓷晶体内部密度高,该值更高;因此,电子通过金属/陶瓷界面易于转移并高度转移。另一方面,在硅/大带隙陶瓷界面中发生了新现象,这是由于电子-空穴复合而产生的界面态密度的产生。这种界面现象取决于陶瓷的能带隙,该能带隙解释了大带隙陶瓷材料的W Chem-Equil值的变化。

更新日期:2020-05-02
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