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Investigation of Adhesion Mechanism in Molten Silicon/Ceramics Systems

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Abstract

An experimental study was conducted to investigate the interfaciale adhesion between molten silicon and TiB2, ZrB2 and HfB2 ceramics by using the sessile drop technique. Contact angle measurements were performed as a function of wetting time at 1703 °C. The interface between silicon and ceramic was analyzed using SEM-EDS. The dependence of adhesion energy, Wad, on elastic parameters of these systems was investigated. Different approaches are used and semi-empirical relations are deduced for all systems. It is shown that, in all cases, the adhesion energy increases linearly with Rayleigh velocities of ceramic substrate, VRC; it takes the form: Wad. = 0.07 VRC + C. Where the first term of this equation represents the Van der Waals, WVDW, contribution of Wad, it is only depends on VRC. However, the second term represent the chemical equilibrium term, Wchem-equil, is strongly depends on the system combination as well as on the energy gap of the ceramics substrate. Moreover, Wchem-equil is higher for small bandgap ceramic materials due to big density inside ceramic crystal; consequently, ease and height electron transfer through the metal/ceramic interface. On the other hand, a new phenomenon takes place in silicon/large bandgap ceramics interfaces which is the generation of the interface states density that occur from electrons-holes recombination. This interfacial phenomenon depends on energy bandgap of ceramic which explained the variation of Wchem-equil values for large bandgap ceramic materials.

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  1. Department of Physics, Faculty of Sciences, University 20 Août 1955, BP 26, 21000, Skikda, Algeria

    Zakaria Hadef & Kenza Kamli

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Hadef, Z., Kamli, K. Investigation of Adhesion Mechanism in Molten Silicon/Ceramics Systems. Silicon 13, 729–737 (2021). https://doi.org/10.1007/s12633-020-00440-2

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