Abstract

It is shown that transient processes arising in the growth chamber of a molecular beam epitaxy (MBE) system influence the structure of interfaces and electron spectrum of quantum wells in GaAs/Al_xGa_{1 –x}As heterostructures used for the creation of photodetectors (PDs) operating in the mid-IR range. These processes lead to a low-frequency shift of the PD operating transition, appearance of interband transition lines (forbidden by selection rules) in the absorption spectrum, and decrease in the energy shift between quantum-confinement levels formed by light and heavy holes. These effects provide a simple approach to contactless evaluation of the quality of interfaces in GaAs/Al_xGa_{1 –x}As heterostructures for PDs.

中文翻译：

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界面效应对用于创建中红外光电探测器的GaAs / AlGaAs结构电子光谱的影响

摘要

结果表明，在分子束外延（MBE）系统的生长室中发生的瞬态过程会影响GaAs / Al _x Ga _{1 – x} As用于创建光电探测器（PDs）的异质结构的界面结构和量子阱的电子光谱。）在中红外范围内运行。这些过程导致PD工作转换的低频移动，吸收光谱中带间转换线的出现（选择规则所禁止），以及由轻空穴和重空穴形成的量子约束能级之间的能量转移减少。这些效应提供了一种简单的方法来非接触式评估GaAs / Al _x Ga _{1 – x中}的界面质量作为PD的异质结构。