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The Influence of Interfacial Effects on the Electron Spectrum of GaAs/AlGaAs Structures Used for the Creation of Mid-IR Photodetectors
Technical Physics Letters ( IF 0.8 ) Pub Date : 2020-04-28 , DOI: 10.1134/s1063785020030256
V. S. Krivobok , D. A. Pashkeev , D. A. Litvinov , L. N. Grigor’eva , S. A. Kolosov

Abstract

It is shown that transient processes arising in the growth chamber of a molecular beam epitaxy (MBE) system influence the structure of interfaces and electron spectrum of quantum wells in GaAs/AlxGa1 –xAs heterostructures used for the creation of photodetectors (PDs) operating in the mid-IR range. These processes lead to a low-frequency shift of the PD operating transition, appearance of interband transition lines (forbidden by selection rules) in the absorption spectrum, and decrease in the energy shift between quantum-confinement levels formed by light and heavy holes. These effects provide a simple approach to contactless evaluation of the quality of interfaces in GaAs/AlxGa1 –xAs heterostructures for PDs.


中文翻译:

界面效应对用于创建中红外光电探测器的GaAs / AlGaAs结构电子光谱的影响

摘要

结果表明,在分子束外延(MBE)系统的生长室中发生的瞬态过程会影响GaAs / Al x Ga 1 – x As用于创建光电探测器(PDs)的异质结构的界面结构和量子阱的电子光谱。)在中红外范围内运行。这些过程导致PD工作转换的低频移动,吸收光谱中带间转换线的出现(选择规则所禁止),以及由轻空穴和重空穴形成的量子约束能级之间的能量转移减少。这些效应提供了一种简单的方法来非接触式评估GaAs / Al x Ga 1 – x中的界面质量作为PD的异质结构。
更新日期:2020-04-28
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