Abstract
It is shown that transient processes arising in the growth chamber of a molecular beam epitaxy (MBE) system influence the structure of interfaces and electron spectrum of quantum wells in GaAs/AlxGa1 –xAs heterostructures used for the creation of photodetectors (PDs) operating in the mid-IR range. These processes lead to a low-frequency shift of the PD operating transition, appearance of interband transition lines (forbidden by selection rules) in the absorption spectrum, and decrease in the energy shift between quantum-confinement levels formed by light and heavy holes. These effects provide a simple approach to contactless evaluation of the quality of interfaces in GaAs/AlxGa1 –xAs heterostructures for PDs.
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This work was supported in part by the Russian Science Foundation, project no. 19-79-30086.
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Translated by P. Pozdeev
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Krivobok, V.S., Pashkeev, D.A., Litvinov, D.A. et al. The Influence of Interfacial Effects on the Electron Spectrum of GaAs/AlGaAs Structures Used for the Creation of Mid-IR Photodetectors. Tech. Phys. Lett. 46, 256–259 (2020). https://doi.org/10.1134/S1063785020030256
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DOI: https://doi.org/10.1134/S1063785020030256