A simple physics-based three-dimensional (3-D) analytical model for AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs) is presented. The model accurately predicts the short-channel effects (SCEs) in the channel region for various device dimensions, viz. channel length and width, by solving the three-dimensional Poisson equation. The effects of the barrier layer (AlInSb) thickness and the high doping concentration on the threshold voltage are also considered. Analytical expressions for the surface potential and threshold voltage are derived, and the analytical results closely match those obtained from Sentaurus technology computer-aided design (TCAD) simulations. The drain current and transconductance of the AlInSb/AlSb/InSb double-gate HEMT device are compared with experimental data obtained for a quantum-well field-effect transistor (QWFET). The proposed AlInSb/AlSb/InSb double-gate HEMT shows excellent properties for use in high-speed and low-power applications.

中文翻译：

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小尺寸AlInSb / AlSb / InSb双栅极高电子迁移率晶体管（DG-HEMT）的三维分析建模

提出了一种简单的基于物理的AlInSb / AlSb / InSb双栅极高电子迁移率晶体管（DG-HEMT）的三维（3-D）分析模型。该模型可以准确预测各种器件尺寸的通道区域中的短通道效应（SCE），即。通过求解三维泊松方程来确定通道的长度和宽度。还考虑了势垒层（AlInSb）的厚度和高掺杂浓度对阈值电压的影响。推导了表面电势和阈值电压的分析表达式，分析结果与Sentaurus技术计算机辅助设计（TCAD）仿真获得的结果非常匹配。将AlInSb / AlSb / InSb双栅极HEMT器件的漏极电流和跨导与从量子阱场效应晶体管（QWFET）获得的实验数据进行比较。拟议的AlInSb / AlSb / InSb双栅极HEMT具有出色的性能，可用于高速和低功率应用。